| PART |
Description |
Maker |
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| FDP7030BLSS62Z FDB7030BLS |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|6A条（丁）|63AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
|
Fairchild Semiconductor, Corp.
ITT, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
| ALD521DSD ALD521D ALD521DPD |
MOSFET, P POWERPAKMOSFET, P POWERPAK; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:50A; Power, Pd:1.8W; Resistance, Rds on:0.0085R; SMD:1;
24 BIT SERIAL INTERFACE DIGITAL CONTROLLER
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 6.7AI（四）|63AB
|
Sumida, Corp.
|
| IRHN250 IRHN450 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|贴片
|
Black Box, Corp.
|
| NSFY30509 NSFY30942 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 900V五（巴西）直| 3A条（丁）|57
|
Harwin PLC
|
| 2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
|
